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產(chǎn)品系列

羅斌森

  • FCH023N65S3-F155

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Series : SuperFET? III
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 650V
    Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 23 mOhm @ 37.5A, 10V
    Vgs(th) (Max) @ Id : 4.5V @ 7.5mA
    Gate Charge (Qg) (Max) @ Vgs : 222nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 7160pF @ 400V
    FET Feature : Super Junction
    Power Dissipation (Max) : 595W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-247 Long Leads
    Package / Case : TO-247-3

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