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產(chǎn)品系列

羅斌森

  • ATP112-TL-H

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 25A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
    Rds On (Max) @ Id, Vgs : 43 mOhm @ 13A, 10V
    Gate Charge (Qg) (Max) @ Vgs : 33.5nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 1450pF @ 20V
    Power Dissipation (Max) : 40W (Tc)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : ATPAK
    Package / Case : ATPAK (2 leads+tab)

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