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產(chǎn)品系列

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  • CSD19538Q2T

  • Manufacturer : Texas Instruments
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Series : NexFET?
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 13.1A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
    Rds On (Max) @ Id, Vgs : 59 mOhm @ 5A, 10V
    Vgs(th) (Max) @ Id : 3.8V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 5.6nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 454pF @ 50V
    Power Dissipation (Max) : 2.5W (Ta), 20.2W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 6-WSON (2x2)
    Package / Case : 6-WDFN Exposed Pad

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