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羅斌森

  • NSV60101DMTWTBG

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : 2 NPN (Dual)
    Current - Collector (Ic) (Max) : 1A
    Voltage - Collector Emitter Breakdown (Max) : 60V
    Vce Saturation (Max) @ Ib, Ic : 180mV @ 100mA, 1A
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 500mA, 2V
    Power - Max : 2.27W
    Frequency - Transition : 180MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 6-WDFN Exposed Pad
    Supplier Device Package : 6-WDFN (2x2)

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