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產(chǎn)品系列

羅斌森

  • NVMFD5875NLT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : 2 N-Channel (Dual)
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 7A
    Rds On (Max) @ Id, Vgs : 33 mOhm @ 7.5A, 10V
    Vgs(th) (Max) @ Id : 3V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
    Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 25V
    Power - Max : 3.2W
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-PowerTDFN
    Supplier Device Package : 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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