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羅斌森

  • NVD5865NLT4G

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Alternate Packaging
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 46A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 16 mOhm @ 19A, 10V
    Vgs(th) (Max) @ Id : 2V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 29nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 25V
    Power Dissipation (Max) : 3.1W (Ta), 71W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : DPAK
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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