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羅斌森

  • 2N7002WT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 310mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 500mA, 10V
    Vgs(th) (Max) @ Id : 2.5V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 0.7nC @ 4.5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 24.5pF @ 20V
    Power Dissipation (Max) : 280mW (Tj)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SC-70-3 (SOT323)
    Package / Case : SC-70, SOT-323

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