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羅斌森

  • NSVMMBTH10LT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : NPN
    Voltage - Collector Emitter Breakdown (Max) : 25V
    Frequency - Transition : 650MHz
    Power - Max : 225mW
    DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 4mA, 10V
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-236-3, SC-59, SOT-23-3
    Supplier Device Package : SOT-23

極速報價

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