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羅斌森

  • NGTB50N60S1WG

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Last Time Buy
    IGBT Type : Trench
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 100A
    Current - Collector Pulsed (Icm) : 200A
    Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 50A
    Power - Max : 417W
    Switching Energy : 1.5mJ (on), 460μJ (off)
    Input Type : Standard
    Gate Charge : 220nC
    Td (on/off) @ 25°C : 100ns/237ns
    Test Condition : 400V, 50A, 10 Ohm, 15V
    Reverse Recovery Time (trr) : 94ns
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-247-3
    Supplier Device Package : TO-247-3

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