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羅斌森

  • 2N5551G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 600mA
    Voltage - Collector Emitter Breakdown (Max) : 160V
    Vce Saturation (Max) @ Ib, Ic : 200mV @ 5mA, 50mA
    Current - Collector Cutoff (Max) : 50nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
    Power - Max : 625mW
    Frequency - Transition : 300MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92-3

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