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羅斌森
羅斌森

  • MUN5312DW1T1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 22 kOhms
    Resistor - Emitter Base (R2) : 22 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 300μA, 10mA
    Current - Collector Cutoff (Max) : 500nA
    Power - Max : 250mW
    Package / Case : 6-TSSOP, SC-88, SOT-363
    Supplier Device Package : SC-88/SC70-6/SOT-363

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