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羅斌森

  • MJD31C1G

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 3A
    Voltage - Collector Emitter Breakdown (Max) : 100V
    Vce Saturation (Max) @ Ib, Ic : 1.2V @ 375mA, 3A
    Current - Collector Cutoff (Max) : 50μA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 10 @ 3A, 4V
    Power - Max : 1.56W
    Frequency - Transition : 3MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
    Supplier Device Package : I-PAK

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