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羅斌森

  • MJD112G

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Alternate Packaging
    Part Status : Active
    Transistor Type : NPN - Darlington
    Current - Collector (Ic) (Max) : 2A
    Voltage - Collector Emitter Breakdown (Max) : 100V
    Vce Saturation (Max) @ Ib, Ic : 3V @ 40mA, 4A
    Current - Collector Cutoff (Max) : 20μA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 2A, 3V
    Power - Max : 1.75W
    Frequency - Transition : 25MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
    Supplier Device Package : DPAK

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