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羅斌森

  • MJ11012G

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Active
    Transistor Type : NPN - Darlington
    Current - Collector (Ic) (Max) : 30A
    Voltage - Collector Emitter Breakdown (Max) : 60V
    Vce Saturation (Max) @ Ib, Ic : 4V @ 300mA, 30A
    Current - Collector Cutoff (Max) : 1mA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 20A, 5V
    Power - Max : 200W
    Frequency - Transition : 4MHz
    Operating Temperature : -55°C ~ 200°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-204AA, TO-3
    Supplier Device Package : TO-204 (TO-3)

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