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羅斌森

  • NTHL080N120SC1

  • Manufacturer : ON Semiconductor
    Part Status : Active
    FET Type : N-Channel
    Technology : SiCFET (Silicon Carbide)
    Drain to Source Voltage (Vdss) : 1200V
    Current - Continuous Drain (Id) @ 25°C : 44A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 20V
    Rds On (Max) @ Id, Vgs : 110 mOhm @ 20A, 20V
    Vgs(th) (Max) @ Id : 4.3V @ 5mA
    Gate Charge (Qg) (Max) @ Vgs : 56nC @ 20V
    Vgs (Max) : +25V, -15V
    Input Capacitance (Ciss) (Max) @ Vds : 1670pF @ 800V
    Power Dissipation (Max) : 348W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-247-3
    Package / Case : TO-247-3 Variant

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