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羅斌森

  • J112

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    FET Type : N-Channel
    Voltage - Breakdown (V(BR)GSS) : 35V
    Current - Drain (Idss) @ Vds (Vgs=0) : 5mA @ 15V
    Voltage - Cutoff (VGS off) @ Id : 1V @ 1μA
    Resistance - RDS(On) : 50 Ohms
    Power - Max : 625mW
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92-3

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