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產(chǎn)品系列

羅斌森

  • HGTP2N120CN

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Obsolete
    IGBT Type : NPT
    Voltage - Collector Emitter Breakdown (Max) : 1200V
    Current - Collector (Ic) (Max) : 13A
    Current - Collector Pulsed (Icm) : 20A
    Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 2.6A
    Power - Max : 104W
    Switching Energy : 96μJ (on), 355μJ (off)
    Input Type : Standard
    Gate Charge : 30nC
    Td (on/off) @ 25°C : 25ns/205ns
    Test Condition : 960V, 2.6A, 51 Ohm, 15V
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3
    Supplier Device Package : TO-220-3

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