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產(chǎn)品系列

羅斌森

  • FJN3313RTA

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Box (TB)
    Part Status : Obsolete
    Transistor Type : NPN - Pre-Biased
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 2.2 kOhms
    Resistor - Emitter Base (R2) : 47 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 500μA, 10mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    Frequency - Transition : 250MHz
    Power - Max : 300mW
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Supplier Device Package : TO-92-3

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