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羅斌森

  • FJN3312RBU

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN - Pre-Biased
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 40V
    Resistor - Base (R1) : 47 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    Frequency - Transition : 250MHz
    Power - Max : 300mW
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92-3

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