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羅斌森

  • HGTG27N120BN

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Not For New Designs
    IGBT Type : NPT
    Voltage - Collector Emitter Breakdown (Max) : 1200V
    Current - Collector (Ic) (Max) : 72A
    Current - Collector Pulsed (Icm) : 216A
    Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 27A
    Power - Max : 500W
    Switching Energy : 2.2mJ (on), 2.3mJ (off)
    Input Type : Standard
    Gate Charge : 270nC
    Td (on/off) @ 25°C : 24ns/195ns
    Test Condition : 960V, 27A, 3 Ohm, 15V
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-247-3
    Supplier Device Package : TO-247

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