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產(chǎn)品系列

羅斌森

  • FGH75T65SQDNL4

  • Manufacturer : ON Semiconductor
    Part Status : Active
    IGBT Type : Trench Field Stop
    Voltage - Collector Emitter Breakdown (Max) : 650V
    Current - Collector (Ic) (Max) : 200A
    Current - Collector Pulsed (Icm) : 200A
    Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 75A
    Power - Max : 375W
    Switching Energy : 1.25mJ (on), 1.26mJ (off)
    Input Type : Standard
    Gate Charge : 152nC
    Td (on/off) @ 25°C : 44ns/208ns
    Test Condition : 400V, 75A, 10 Ohm, 15V
    Reverse Recovery Time (trr) : 134ns
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-3P-3 Full Pack
    Supplier Device Package : TO-3PF-3

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