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羅斌森

  • FDB12N50FTM-WS

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Series : UniFET?
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 500V
    Current - Continuous Drain (Id) @ 25°C : 11.5A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 700 mOhm @ 6A, 10V
    Vgs(th) (Max) @ Id : 5V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 1395pF @ 25V
    Power Dissipation (Max) : 165W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : D2PAK
    Package / Case : TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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